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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2024-05-24
11:55		 Hokkaido
(Primary: On-site, Secondary: Online)		 Charge transport control of layered carbon nitride films
Noriyuki Urakami, Masaki Tachibana, Yoshio Hashimoto (Shinshu Univ.) 		 [more]
CPM 2021-10-27
14:00		 Online Online Chemical vapor deposition of layered carbon nitride film
Noriyuki Urakami, Kenshuke Takashima, Yoshio Hashimoto (Shinshu Univ.) CPM2021-28		 Graphitic carbon nitride (g-C3N4) exhibits semiconducting properties and is a promising candidate for use as a metal- fr... [more] CPM2021-28
pp.31-35
CPM 2017-10-27
13:30		 Nagano Shinshu Univ. Nagano-Education Campus, E7 building 3F Investigation of formation conditions for boron carbon nitride film by chemical vapor deposition
Maito Kosaka, Noriyuki Urakami, Yoshio Hashimoto (Shinshu Univ.) CPM2017-67		 Toward to realization of carbon-based compound semiconductors with wide energy bandgap, as a novel production method of ... [more] CPM2017-67
pp.1-4
ED, CPM, SDM 2015-05-28
15:15		 Aichi Venture Business Laboratory, Toyohashi University of Technology Control of N composition of GaAsN alloy grown by surface nitridation
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22		 We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] ED2015-20 CPM2015-5 SDM2015-22
pp.21-26
SDM, ED, CPM 2013-05-16
15:45		 Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Formation of GaAsN alloys by surface nitridation
Noriyuki Urakami, Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada (Toyohashi Univ. of Tech.) ED2013-20 CPM2013-5 SDM2013-27		 GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation... [more] ED2013-20 CPM2013-5 SDM2013-27
pp.23-26
ED, SDM, CPM 2012-05-17
13:40		 Aichi VBL, Toyohashi Univ. of Technol. Improvement in crystalline quality of GaAsN alloy by high temperature growth
Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20		 GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] ED2012-18 CPM2012-2 SDM2012-20
pp.7-10
CPM, SDM, ED 2011-05-19
14:15		 Aichi Nagoya Univ. (VBL) Molecular beam epitaxy growth of BGaP
Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24		 Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] ED2011-11 CPM2011-18 SDM2011-24
pp.55-58
ED, CPM, SDM 2009-05-15
10:55		 Aichi Satellite Office, Toyohashi Univ. of Technology Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells.
Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20		 We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] ED2009-30 CPM2009-20 SDM2009-20
pp.65-70
ED, CPM, SDM 2009-05-15
11:20		 Aichi Satellite Office, Toyohashi Univ. of Technology Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21		 In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] ED2009-31 CPM2009-21 SDM2009-21
pp.71-76
 Results 1 - 9 of 9  /   
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