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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2007-10-12
13:50		 Fukui Fukui Univ. (Fukui) Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74		 We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] ED2007-173 CPM2007-99 LQE2007-74
pp.85-88
ED, SDM 2007-06-25
15:30		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea (Overseas) Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) 		Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
ED, SDM 2007-06-25
15:55		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea (Overseas) Analysis of plasma etching damages in GaN by excess carrier lifetime measurements
Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) 		Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more]
SDM, ED, CPM 2007-05-24
14:50		 Shizuoka Shizuoka Univ. (Shizuoka) Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) 		Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
SDM, ED, CPM 2007-05-25
11:20		 Shizuoka Shizuoka Univ. (Shizuoka) Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) 		Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
 Results 1 - 5 of 5  /   
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