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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2015-04-17
Miyagi Laboratory for Nanoelectronics and Spintronics Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2015-11
CPM 2014-09-05
Yamagata The 100th Anniversary Hall, Yamagata University RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) CPM2014-86
Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxi... [more] CPM2014-86
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