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 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-06-21
15:05		 Aichi VBL, Nagoya Univ. Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56		 Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] SDM2012-56
pp.69-74
SDM 2012-06-21
16:35		 Aichi VBL, Nagoya Univ. Interface controlled silicide Schottky S/D for future 3D devices
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59		 This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] SDM2012-59
pp.87-92
SDM 2011-07-04
09:00		 Aichi VBL, Nagoya Univ. High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50		 This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] SDM2011-50
pp.1-5
SDM 2010-06-22
10:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35		 Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] SDM2010-35
pp.11-16
SDM 2010-06-22
10:45		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Nickel silicide Encroachment in Silicon Nanowire and its Suppression
Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36		 Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence o... [more] SDM2010-36
pp.17-22
SDM 2010-06-22
13:45		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41		 A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] SDM2010-41
pp.43-48
SDM 2007-06-08
11:20		 Hiroshima Hiroshima Univ. ( Faculty Club) Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44		 This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] SDM2007-44
pp.71-74
SDM 2006-06-21
16:00		 Hiroshima Faculty Club, Hiroshima Univ. Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) 		 [more] SDM2006-48
pp.37-41
 Results 1 - 8 of 8  /   
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