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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
PRMU, MVE, IPSJ-CVIM [detail] 2019-01-17
16:30		 Kyoto  
Ryo Nakao, Seiichi Uchida (Kyushu Univ.) PRMU2018-101 MVE2018-43		 (To be available after the conference date) [more] PRMU2018-101 MVE2018-43
pp.39-44
LQE 2018-07-12
13:55		 Hokkaido   Reduction of threading dislocations and antiphase domains in MOVPE-grown GaAs on Si(100)
Ryo Nakao, Tomonari Sato, Hiroki Sugiyama, Shinji Matsuo (NTT) LQE2018-22		  [more] LQE2018-22
pp.9-12
LQE 2015-12-18
11:30		 Tokyo   [Encouragement Talk] High-speed operation of GaAs/InGaAs metamorphic lasers emitting at 1.3 um
Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Takaaki Kakitsuka, Tsuyoshi Yamamoto, Shinji Matsuo (NTT) LQE2015-126		  [more] LQE2015-126
pp.15-20
OPE, LQE 2014-12-19
16:40		 Tokyo Kikai-Shinko-Kaikan, NTT Atsugi R&D center High-speed operation of 1.3 um GaAs/InGaAs metamorphic lasers fabricated by using highly-accurate control of crystal lattice relaxation based on in-situ wafer curvature measurement
Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Tsuyoshi Yamamoto, Shinji Matsuo (NTT) OPE2014-150 LQE2014-137		 Metamorphic-growth technology has a potential to overcome the restriction of the lattice matching in the semiconductor d... [more] OPE2014-150 LQE2014-137
pp.59-64
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