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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
17:15
Kyoto Kyoto University Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] EID2014-37 SDM2014-132
pp.125-128
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