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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| PRMU | 2018-12-14 16:35 |
Miyagi | (Miyagi) | Vision and Language for Automatic Paper Summary Generation Shintaro Yamamoto, Yoshihiro Fukuhara (Waseda Univ.), Ryota Suzuki, Hirokatsu Kataoka (AIST), Shigeo Morishima (Waseda Research Institute for Science and Engineering)  PRMU2018-95 |
In recent years, the number of papers in the field of computer science is explosively increasing and it takes enormous t... [more] | PRMU2018-95 pp.109-114 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2017-11-07 11:20 |
Kumamoto | Kumamoto-Kenminkouryukan Parea (Kumamoto) | IoT Platform using an MCU-FPGA Hybrid System and Feasibility Study of Wireless Configuration Ryota Suzuki, Hironori Nakajo (TUAT) RECONF2017-45 |
An MCU (Micro Control Unit) which is used in an embedded system has been recently equipped with a communication function... [more] | RECONF2017-45 pp.49-54 |
| CPSY, RECONF, VLD, IPSJ-SLDM, IPSJ-ARC [detail] | 2017-01-24 09:25 |
Kanagawa | Hiyoshi Campus, Keio Univ. (Kanagawa) | Framework for a Hybrid System with a pair of MCU and FPGA Ryota Suzuki, Nakajo Hironori (TUAT) VLD2016-81 CPSY2016-117 RECONF2016-62 |
Recently, FPGAs for mobile use which have low pin count and small packages are commonly available. Due to limitation of... [more] |
VLD2016-81 CPSY2016-117 RECONF2016-62 pp.67-72 |
| HCS | 2016-09-14 13:30 |
Ishikawa | Shiinoki Cultural Complex (Ishikawa) | [Poster Presentation]
Robotic Wheelchair Moving Alongside a Companion with BLE Smart Phone Ryota Sekine, Hidekazu Takahashi, Ryota Suzuki, Hisato Fukuda, Yoshinori Kobayashi, Yoshinori Kuno, Keiichi Yamazaki (Saitama Univ.), Akiko Yamazaki (Tokyo Univ. of Technology) HCS2016-55 |
With the progress of the aging society, lack of caregivers and reducing their load is one of the important issues. T... [more] |
HCS2016-55 pp.11-15 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 15:05 |
Osaka | Central Electric Club (Osaka) | Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35 |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] | SDM2016-67 ICD2016-35 pp.123-126 |
| LOIS, ISEC, SITE | 2015-11-07 11:20 |
Kanagawa | Kanagawa Univ. (Kanagawa) | A dynamic filtering method to reduce DDoS packets by using access tokens Ryota Suzuki, Hikaru Morita (Kanagawa Univ.) ISEC2015-53 SITE2015-40 LOIS2015-47 |
The flow controls on packets in transmission channel are general measures against DDoS (Distributed Denial of Service) a... [more] | ISEC2015-53 SITE2015-40 LOIS2015-47 pp.111-116 |
| SDM, ICD | 2015-08-25 11:45 |
Kumamoto | Kumamoto City (Kumamoto) | Threshold Voltage and Current Variability of Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2015-68 ICD2015-37 |
[more] | SDM2015-68 ICD2015-37 pp.59-62 |
| RECONF | 2014-06-12 15:35 |
Miyagi | Katahira Sakura Hall (Miyagi) | Implementation of a RISC Processor with a Complex Instruction Accelerator
-- Return to a CISC -- Ryota Suzuki (Tokyo Univ. of Agriculture and Tech.), Takefumi Miyoshi (e-trees), Hironori Nakajo (Tokyo Univ. of Agriculture and Tech.) RECONF2014-13 |
In this paper, we propose a RISC processor with an accelerator which can execute a complex instruction with a co-proces... [more] |
RECONF2014-13 pp.67-72 |
| SDM, ED | 2013-02-28 09:00 |
Hokkaido | Hokkaido Univ. (Hokkaido) | Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] | ED2012-137 SDM2012-166 pp.47-52 |
| SANE | 2011-01-28 15:45 |
Nagasaki | Nagasaki Prefectural Art Museum (Nagasaki) | An X-Band Transmitting and Receiving Power Amplifier Unit using GaN HEMTs for Active Phased Array Antennas Yuichi Shiraishi, Ryota Suzuki, Masahiro Tanabe, Tsuyoshi Kumamoto, Yasuharu Masuda (Toshiba) SANE2010-157 |
In this report, an X-band transmitting and receiving power amplifier unit using GaN HEMTs is presented. This unit has de... [more] | SANE2010-157 pp.109-112 |
| ITE-MMS, MRIS | 2010-07-09 12:00 |
Ibaraki | Ibaraki Univ. (Ibaraki) | Barium-ferrite Paticulate Media For High Recording Density Tape System Takeshi Harasawa, Ryota Suzuki, Atsushi Musha, Osamu Shimizu, Hitoshi Noguchi (FUJIFILM) |
[more] | |
| EE | 2009-10-09 11:30 |
Tokyo | (Tokyo) | The reduction of greenhouse gases by a Dual Mode Vehicle with fuel cells Ryota Suzuki, Toshiaki Yachi (Tokyo Univ. of Sci.) EE2009-22 |
[more] | EE2009-22 pp.19-24 |
| MW | 2008-12-12 14:50 |
Toyama | Toyama-Univ. Gofuku-camp. (Toyama) | An X-Band GaN HEMT Power Amplifier Unit for a Active Phased Array Antenna Ryota Suzuki, Taihei Nakata, Tsuyoshi Kumamoto, Yoshiaki Satake, Kazuhiro Kanto (Toshiba Corp.) MW2008-157 |
An X-band power amplifier unit for an active phased array antenna is developed, which has 16 transmitter circuits with G... [more] | MW2008-157 pp.65-69 |
| EE, IEE-IEA | 2008-05-09 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Reduction of Greenhouse Gas Emissions Using a Dual Mode Vehicle with a Fuel Cell Ryota Suzuki, Toshiaki Yachi (Tokyo Univ.of Science) EE2008-2 |
In recent years, solutions for environmental and energy problems have been demanded. In particular, excessive greenhouse... [more] | EE2008-2 pp.7-12 |
| SDM | 2007-12-14 11:20 |
Nara | Nara Institute Science and Technology (Nara) | Electrical conduction characteristics of NiO thin films for ReRAM Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-226 |
Since NiO thin films have resistive switching characteristics, NiO is one of the attractive materials for ReRAM. In this... [more] | SDM2007-226 pp.19-22 |
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