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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-27
14:10
Online Online First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure
Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) ED2020-21 CPM2020-42 LQE2020-72
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optica... [more] ED2020-21 CPM2020-42 LQE2020-72
pp.79-82
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
11:15
Osaka Osaka University Nakanoshima Center InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Masahiro Uemukai, So Kusumoto, Daiki Tazuke (Osaka Univ.), Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue (Toshiba), Ryuji Katayama (Osaka Univ.) PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion ... [more] PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
pp.243-246
LQE, CPM, ED 2017-12-01
15:10
Aichi Nagoya Inst. tech. Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG
Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) ED2017-67 CPM2017-110 LQE2017-80
 [more] ED2017-67 CPM2017-110 LQE2017-80
pp.87-90
ED 2015-07-24
13:15
Ishikawa IT Business Plaza Musashi 5F Electrical characteristics of N-polar p-type GaN Schottky contacts
Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-36
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] ED2015-36
pp.1-4
OPE, LQE 2014-06-20
11:25
Tokyo   Wide band wavelength generation in nonlinear TiO2 waveguide
Tomohiro Kita, Koji Uchijima, Masahiro Yabuno, Takashi Aisaka, Ryuji Katayama, Keiichi Edamatsu, Hirohito Yamada (Tohoku Univ.) OPE2014-14 LQE2014-19
We studied the nonlinear optical waveguide with TiO2 core which has large nonlinear optical constant and wide band-gap e... [more] OPE2014-14 LQE2014-19
pp.11-14
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
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