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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2008-04-18
13:05		 Tokyo   [Invited Talk] 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) ICD2008-11		 15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides... [more] ICD2008-11
pp.57-62
SDM 2008-03-14
13:05		 Tokyo Kikai-Shinko-Kaikan Bldg. 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) SDM2007-273		 15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides... [more] SDM2007-273
pp.1-6
ICD 2007-04-13
14:20		 Oita   25nm SONOS-type Memory Device usinh Double Tunnel Junction
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba Co.) ICD2007-16		 When a nano meter scale conductive island is lying between two tunnel resistance, this structure is called "Double junct... [more] ICD2007-16
pp.89-93
ICD 2006-04-14
14:20		 Oita Oita University Floating Gate Type Planar MOSFET Memory with 35 nm Gate Length using Double Junction Tunneling
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) 		 [more] ICD2006-19
pp.103-107
ICD 2005-12-16
09:00		 Kochi   Ultra Small Random Number Generator for Information Security
Shinichi Yasuda, Tetsufumi Tanamoto, Ryuji Ohba, Keiko Abe, Hanae Nozaki, Shinobu Fujita (Toshiba Corp.) 		We present small random number generators using silicon devices that generate large fluctuating signal as noise source d... [more] ICD2005-192
pp.1-6
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