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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-01-30
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors.
A da... [more]
SDM2022-80
pp.5-8
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