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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2023-12-01 16:40 |
Shizuoka |
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Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima (Nippon Tungsten), Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara (RIKEN), Sachie Fujikawa, Hiroyuki Yaguchi (Saitama Univ), Yasushi Iwaisako (Nippon Tungsten), Hideki Hirayama (RIKEN) ED2023-37 CPM2023-79 LQE2023-77 |
AlGaN-based 230nm-band far-UVC LEDs that is harmless to the human body were developed toward achievements of shorter wav... [more] |
ED2023-37 CPM2023-79 LQE2023-77 pp.102-105 |
ED, THz |
2017-12-19 09:00 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81 |
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] |
ED2017-81 pp.33-36 |
ED |
2015-07-25 11:05 |
Ishikawa |
IT Business Plaza Musashi 5F |
Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45 |
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] |
ED2015-45 pp.45-49 |
LQE, ED, CPM |
2014-11-27 14:05 |
Osaka |
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The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107 |
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] |
ED2014-79 CPM2014-136 LQE2014-107 pp.27-32 |
ED |
2014-08-01 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 |
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the di... [more] |
ED2014-55 pp.13-18 |
ED |
2014-08-01 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) ED2014-57 |
III-V semiconductors have attracted much attention as promising n-type channel materials for the future logic device to ... [more] |
ED2014-57 pp.25-28 |
ED |
2013-08-09 09:25 |
Toyama |
University of Toyama |
Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] |
ED2013-45 pp.37-42 |
ED |
2013-08-09 09:50 |
Toyama |
University of Toyama |
Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46 |
Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-in... [more] |
ED2013-46 pp.43-48 |
ED, LQE, CPM |
2012-11-30 13:40 |
Osaka |
Osaka City University |
Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] |
ED2012-84 CPM2012-141 LQE2012-112 pp.87-92 |
LQE, ED, CPM |
2011-11-18 13:10 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) ED2011-94 CPM2011-143 LQE2011-117 |
(To be available after the conference date) [more] |
ED2011-94 CPM2011-143 LQE2011-117 pp.107-112 |
LQE, ED, CPM |
2008-11-27 17:40 |
Aichi |
Nagoya Institute of Technology |
270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112 |
250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] |
ED2008-168 CPM2008-117 LQE2008-112 pp.77-82 |
CPM, ED, LQE |
2007-10-11 15:45 |
Fukui |
Fukui Univ. |
340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN) ED2007-161 CPM2007-87 LQE2007-62 |
[more] |
ED2007-161 CPM2007-87 LQE2007-62 pp.29-34 |
LQE, ED, CPM |
2005-10-14 15:10 |
Shiga |
Ritsumeikan Univ. |
Obserbation of high internal quantum efficiency from 330nm-band InAlGaN quantum wells Hideki Hirayama, Takayoshi Takano, Tomoaki Ohashi, Sachie Fujikawa (RIKEN), Norihiko Kamata (Saitama Univ.), Yukihiro Kondo (RIKEN) |
[more] |
ED2005-153 CPM2005-140 LQE2005-80 pp.67-72 |
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