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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2011-01-14 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs using highly C-doped layers on Si substrate Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) ED2010-185 MW2010-145 |
In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In... [more] |
ED2010-185 MW2010-145 pp.55-59 |
ED, LQE, CPM |
2009-11-20 14:25 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Large Current operation of GaN MOSFETs Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) ED2009-156 CPM2009-130 LQE2009-135 |
A large current operation of GaN-based MOSFET on Si substrate is reported. To realize both low on-resistance and high br... [more] |
ED2009-156 CPM2009-130 LQE2009-135 pp.133-137 |
ED |
2008-10-23 13:50 |
Fukuoka |
Kyushu Institute of Technology |
High-power AlGaN/GaN HFETs on 4-inch Si substrates Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) ED2008-148 |
[more] |
ED2008-148 pp.139-142 |
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