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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2012-01-12 15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162 |
We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] |
ED2011-139 MW2011-162 pp.111-115 |
MW, ED |
2009-01-16 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] |
ED2008-220 MW2008-185 pp.125-128 |
ED, MW |
2006-01-19 11:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.) |
[more] |
ED2005-202 MW2005-156 pp.17-21 |
LQE, ED, CPM |
2005-10-13 14:50 |
Shiga |
Ritsumeikan Univ. |
AlGaN/GaN heterojunction field-effect transistors with InAlGaN quaternary alloy capping layers lattice matched to GaN Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka (Matsushita Electric), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) |
[more] |
ED2005-130 CPM2005-117 LQE2005-57 pp.57-61 |
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