IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 45  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2024-04-20
16:35
Kagoshima AMA Home Plaza [Invited Talk] Ultra-fast Etching of Organic Thin-Films by Atmospheric Pressure Reactive Thermal Plasma Jet
Seiichiro Higashi, Kyohei Matsumoto, Hiroaki Hanafusa (Hiroshima Univ.)
 [more]
SDM, OME 2023-04-22
16:10
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Development of wafer temperature measurement system for non-contact temperature measurement during plasma process
Ryunosuke Goto, Kenshiro Horiuchi, Jiawen Yu, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) SDM2023-17 OME2023-17
 [more] SDM2023-17 OME2023-17
pp.63-66
OME, SDM 2022-04-23
09:30
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
3-Dimensional Imaging for Transient Thermal Diffusion in Silicon Wafer by Optical Interference Contactless Thermometry (OICT)
Kotaro Matsuguchi, Keiya Fujimoto, Yu Jiawen, Hiroaki Hanafusa, Takuma Sato, Seiichiro Higashi (Hiroshima Univ.) SDM2022-8 OME2022-8
 [more] SDM2022-8 OME2022-8
pp.39-42
SDM, OME 2021-04-23
14:40
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Ultra-rapid Crystallization of Amorphous Germanium Films by Atmospheric Pressure Micro-Thermal Plasma Jet and Investigation on their Electrical Characteristics
Seiichiro Higashi (Hiroshima Univ.)
 [more]
OME 2020-12-25
13:40
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT)
Yuya Urasaki, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ)
Optical-Interference Contactless Thermometer(OICT), which was originally developed by our laboratory, is a temperature m... [more]
SDM 2020-10-22
14:00
Online Online Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet.
Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.) SDM2020-18
 [more] SDM2020-18
pp.20-24
SDM, OME 2020-04-13
15:50
Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)
[Invited Talk] Atmospheric Pressure Thermal Plasma Jet Crystallization and Electrical Characteristics of Phosphorus-doped Germanium Films on Insulator
Seiichiro Higashi (Hiroshima Univ.)
 [more]
OME 2017-12-01
14:50
Saga Sun Messe Tosu [Invited Talk] Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to CMOS Device Fabrication on Plastic Substrate
Seiichiro Higashi (Hiroshima Univ.) OME2017-46
 [more] OME2017-46
pp.53-57
OME, SDM 2017-04-21
10:25
Kagoshima Tatsugochou Shougaigakushuu Center Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate Using Rotation Stage
Wataru Nakano, Tatsuki Hieda, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.)
 [more]
SDM, OME 2016-04-08
16:25
Okinawa Okinawa Prefectural Museum & Art Museum Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors.
Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] SDM2016-9 OME2016-9
pp.35-38
OME, SDM 2015-04-30
13:00
Okinawa Oh-hama Nobumoto Memorial Hall Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit
Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi (Hiroshima Univ.) SDM2015-13 OME2015-13
The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral cr... [more] SDM2015-13 OME2015-13
pp.49-52
SDM 2014-06-19
11:25
Aichi VBL, Nagoya Univ. Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction
Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] SDM2014-48
pp.27-30
SDM, OME 2014-04-10
14:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. [Invited Talk] Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to Device Fabrication
Seiichiro Higashi, Kohei Sakaike, Muneki Akazawa, Shogo Nakamura (Hiroshima Univ.) SDM2014-3 OME2014-3
 [more] SDM2014-3 OME2014-3
pp.11-16
SDM 2013-06-18
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes
Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56
 [more] SDM2013-56
pp.61-66
SDM, ED
(Workshop)
2012-06-27
18:00
Okinawa Okinawa Seinen-kaikan Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor
Shunki Koyanagi, Shohei Hayashi, Tsubasa Mizuno, Kouhei Sakaike, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.)
 [more]
SDM, ED
(Workshop)
2012-06-28
08:45
Okinawa Okinawa Seinen-kaikan Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
 [more]
SDM, ED
(Workshop)
2012-06-28
09:45
Okinawa Okinawa Seinen-kaikan Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
 [more]
SDM 2012-06-21
11:15
Aichi VBL, Nagoya Univ. Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer
Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49
 [more] SDM2012-49
pp.33-36
SDM 2012-06-21
13:55
Aichi VBL, Nagoya Univ. Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion
Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53
 [more] SDM2012-53
pp.53-58
SDM 2012-06-21
14:45
Aichi VBL, Nagoya Univ. Chemical Analysis of As+-implanted Ge(100)
Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55
 [more] SDM2012-55
pp.63-67
 Results 1 - 20 of 45  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan