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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, SDM | 2024-04-20 16:10 |
Kagoshima | AMA Home Plaza | [Invited Talk]
Ultra-fast Etching of Organic Thin-Films by Atmospheric Pressure Reactive Thermal Plasma Jet Seiichiro Higashi, Kyohei Matsumoto, Hiroaki Hanafusa (Hiroshima Univ.)  SDM2024-6 OME2024-6 |
[more] | SDM2024-6 OME2024-6 pp.20-23 |
| SDM, OME | 2023-04-22 16:10 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of wafer temperature measurement system for non-contact temperature measurement during plasma process Ryunosuke Goto, Kenshiro Horiuchi, Jiawen Yu, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) SDM2023-17 OME2023-17 |
[more] | SDM2023-17 OME2023-17 pp.63-66 |
| OME, SDM | 2022-04-23 09:30 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
3-Dimensional Imaging for Transient Thermal Diffusion in Silicon Wafer by Optical Interference Contactless Thermometry (OICT) Kotaro Matsuguchi, Keiya Fujimoto, Yu Jiawen, Hiroaki Hanafusa, Takuma Sato, Seiichiro Higashi (Hiroshima Univ.) SDM2022-8 OME2022-8 |
[more] | SDM2022-8 OME2022-8 pp.39-42 |
| SDM, OME | 2021-04-23 14:40 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Ultra-rapid Crystallization of Amorphous Germanium Films by Atmospheric Pressure Micro-Thermal Plasma Jet and Investigation on their Electrical Characteristics Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| OME | 2020-12-25 13:40 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT) Yuya Urasaki, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ) |
Optical-Interference Contactless Thermometer(OICT), which was originally developed by our laboratory, is a temperature m... [more] | |
| SDM | 2020-10-22 14:00 |
Online | Online | Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet. Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.) SDM2020-18 |
[more] | SDM2020-18 pp.20-24 |
| SDM, OME | 2020-04-13 15:50 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Atmospheric Pressure Thermal Plasma Jet Crystallization and Electrical Characteristics of Phosphorus-doped Germanium Films on Insulator Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| OME | 2017-12-01 14:50 |
Saga | Sun Messe Tosu | [Invited Talk]
Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to CMOS Device Fabrication on Plastic Substrate Seiichiro Higashi (Hiroshima Univ.) OME2017-46 |
[more] | OME2017-46 pp.53-57 |
| OME, SDM | 2017-04-21 10:25 |
Kagoshima | Tatsugochou Shougaigakushuu Center | Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate Using Rotation Stage Wataru Nakano, Tatsuki Hieda, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| SDM, OME | 2016-04-08 16:25 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9 |
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] | SDM2016-9 OME2016-9 pp.35-38 |
| OME, SDM | 2015-04-30 13:00 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi (Hiroshima Univ.) SDM2015-13 OME2015-13 |
The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral cr... [more] | SDM2015-13 OME2015-13 pp.49-52 |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| SDM, OME | 2014-04-10 14:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to Device Fabrication Seiichiro Higashi, Kohei Sakaike, Muneki Akazawa, Shogo Nakamura (Hiroshima Univ.) SDM2014-3 OME2014-3 |
[more] | SDM2014-3 OME2014-3 pp.11-16 |
| SDM | 2013-06-18 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] | SDM2013-56 pp.61-66 |
| SDM, ED (Workshop) |
2012-06-27 18:00 |
Okinawa | Okinawa Seinen-kaikan | Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor Shunki Koyanagi, Shohei Hayashi, Tsubasa Mizuno, Kouhei Sakaike, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 08:45 |
Okinawa | Okinawa Seinen-kaikan | Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:45 |
Okinawa | Okinawa Seinen-kaikan | Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM | 2012-06-21 11:15 |
Aichi | VBL, Nagoya Univ. | Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49 |
[more] | SDM2012-49 pp.33-36 |
| SDM | 2012-06-21 13:55 |
Aichi | VBL, Nagoya Univ. | Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53 |
[more] | SDM2012-53 pp.53-58 |
| SDM | 2012-06-21 14:45 |
Aichi | VBL, Nagoya Univ. | Chemical Analysis of As+-implanted Ge(100) Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55 |
[more] | SDM2012-55 pp.63-67 |
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