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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-27
13:35		 Aichi Nagoya Institute of Technology Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region
Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.) ED2008-159 CPM2008-108 LQE2008-103		 The reduction of reverse-bias leakage current in GaN-based Schottky diodes was investigated using an aluminum facepack t... [more] ED2008-159 CPM2008-108 LQE2008-103
pp.33-36
CPM, ED, LQE 2007-10-11
14:30		 Fukui Fukui Univ. Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks
Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.) 		 [more]
CPM, ED, LQE 2007-10-12
16:05		 Fukui Fukui Univ. Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes
Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.) 		 [more]
ED, CPM, LQE 2006-10-06
13:15		 Kyoto   Fabrication of GaN-based unipolar UV LEDs grown by MOVPE
Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.) 		 [more] ED2006-167 CPM2006-104 LQE2006-71
pp.83-86
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