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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-12-07
16:15		 Kyoto Kyoto Univ. (Katsura) Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory
Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) SDM2012-135		 Improvement of memory performance of conducting-bridge random access memory (CB-RAM) is possible simply by replacing con... [more] SDM2012-135
pp.119-122
ICD 2011-04-19
15:00		 Hyogo Kobe University Takigawa Memorial Hall Basic memory characteristics of HfO2-CB-RAM
Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17		 CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the... [more] ICD2011-17
pp.93-97
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