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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2011-08-10
13:50		 Aomori   Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58		 A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] CPM2011-58
pp.11-14
CPM 2010-10-29
09:25		 Nagano   Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation
Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100		 A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] CPM2010-100
pp.47-50
CPM 2010-10-29
09:50		 Nagano   Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact
Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101		 The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality f... [more] CPM2010-101
pp.51-54
CPM 2009-08-10
15:30		 Aomori Hirosaki Univ. Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer
Shinichiro Suzuki, Akira Sengoku, Takuma Tsuji, Mitsunori Henmi, Yusuke Murata, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-35		 Interface state density was estimated from diode factor $n$ of SiC MIS Schottky diode. The interface state density was t... [more] CPM2009-35
pp.9-12
 Results 1 - 4 of 4  /   
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