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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:20		 Shizuoka Shizuoka Univ. (Hamamatsu) Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83		 (To be available after the conference date) [more] ED2019-40 CPM2019-59 LQE2019-83
pp.33-35
IMQ, IE, MVE, CQ
(Joint) [detail]		 2019-03-15
15:40		 Kagoshima Kagoshima University
Shinji Yamada, Humin Lu, Hyoungseop Kim (Kyusyu Institute of Technology), Namiko Kimura, Takako Okawachi, Etsuro Nozoe, Norifumi Nakamura (Kagoshima Univ.) IMQ2018-75 IE2018-159 MVE2018-106		 (To be available after the conference date) [more] IMQ2018-75 IE2018-159 MVE2018-106
pp.287-290
LQE, OPE 2011-06-30
11:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Characterization of near ultra-violet LEDs using single crystal AlN buffer layer
Hiroshi Katsuno, Mitsuhiro Kushibe, Kei Kaneko, Shinji Yamada, Yasuo Ohba (Toshiba Corp.) OPE2011-20 LQE2011-20		 We have developed near-UV LEDs which adopted high-quality GaN growth technique using high-temperature-grown AlN as a buf... [more] OPE2011-20 LQE2011-20
pp.25-28
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