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All Technical Committee Conferences (Searched in: Recent 10 Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2018-04-20 10:20 |
Tokyo |
(Tokyo) |
[Invited Lecture]
An Implementation of 2RW Dual-Port SRAM using 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT Yohei Sawada, Yoshiki Yamamoto, Takumi Hasegawa, Hiroki Shinkawata, Makoto Yabuuchi (REL), Yoshihiro Shinozaki, Kyoji Ito (NSW), Shinji Tanaka, Nii Koji, Shiro Kamohara (REL) ICD2018-8 |
[more] |
ICD2018-8 pp.29-32 |
SDM, ICD, ITE-IST [detail] |
2017-07-31 10:40 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. (Hokkaido) |
A 65 nm 1.0V 1.84ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT Makoto Yabuuchi, Koji Nii, Shinji Tanaka (Renesas), Shinozaki Yoshihiro (Nippon Systemware), Yoshiki Yamamoto, Takumi Hasegawa, Hiroki Shinkawata, Shiro Kamohara (Renesas) SDM2017-33 ICD2017-21 |
[more] |
SDM2017-33 ICD2017-21 pp.13-16 |
SDM |
2016-10-26 15:30 |
Miyagi |
Niche, Tohoku Univ. (Miyagi) |
[Invited Talk]
Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] |
SDM2016-71 pp.15-20 |
SDM |
2016-10-26 16:10 |
Miyagi |
Niche, Tohoku Univ. (Miyagi) |
[Invited Talk]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] |
SDM2016-72 pp.21-25 |
SDM, ICD |
2015-08-25 10:55 |
Kumamoto |
Kumamoto City (Kumamoto) |
[Invited Talk]
Novel Single p+Poly-Si/Hf/SiON Gate Stack Technology on Silicon-on-Thin-Buried-Oxide (SOTB) for Ultra-Low Leakage Applications Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Masaharu Kobayashi, Toshiro Hiramoto (UT) SDM2015-67 ICD2015-36 |
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf... [more] |
SDM2015-67 ICD2015-36 pp.53-57 |
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