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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2025-01-24 14:20 |
Tokyo | fukaya-kouminkan (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of GaN-based HEMTs for 100 GHz Band 1 Watt Class Power Amplifiers Shiro Ozaki, Yusuke Kumazaki, Yasuhiro Nakasha, Atsushi Yamada, Naoki Hara, Toshihiro Ohki (Fujitsu) |
(To be available after the conference date) [more] | |
| AP (2nd) |
2025-01-09 15:20 |
Kyoto | Ryukoku University (Kyoto) | Heterogeneous Integration for 300-GHz band Array Antenna with Power Amplifiers Shiro Ozaki (Fujitsu), Takuichi Hirano (TCU), Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) |
[more] | |
| ED, MWPTHz | 2024-12-20 11:20 |
Miyagi | RIEC, Tohoku Univ. (Miyagi, Online) (Primary: On-site, Secondary: Online) |
Experiment of Fixed Wireless Data Transmission at 100GHz Band toward 6G Masafumi Tsutsui, Liang Zhou, Yasuhiro Nakasha, Takashi Dateki, Yusuke Kumazaki, Shiro Ozaki, Toshihiro Ohki (FUJITSU)  ED2024-62 MWPTHz2024-74 |
[more] | ED2024-62 MWPTHz2024-74 pp.30-33 |
| ED, CPM, LQE | 2024-11-29 16:20 |
Aichi | Nagoya Institute of Technology (Aichi) | Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu) ED2024-38 CPM2024-82 LQE2024-69 |
In this study, we successfully demonstrated the improved performance of InP-based metal-oxide-semiconductor high-electro... [more] | ED2024-38 CPM2024-82 LQE2024-69 pp.73-78 |
| AP (2nd) |
2024-08-05 15:15 |
Tokyo | Chichijima (Tokyo) | Approximate Evaluation of the Transmission Phase in Microstrip Line Bends Based on Geometric Shape
-- Optimal Shape for Arbitrary Bend Angles and Phase Change Due to Bending -- Yutaka Mimino, Takuichi Hirano (TCU), Naoya Okamoto, Shiro Ozaki, Naoki Hara (Fujitsu) |
We derived an approximate formula that provides the shape and phase change amount that minimizes the reflection loss for... [more] | |
| AP, SANE, SAT (Joint) |
2024-07-24 10:00 |
Hokkaido | Frontier Research in Applied Sciences Building, Hokkaido University (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
A Waveguide Antenna Array Module for Sub-THz Communications Shiro Ozaki (Fujitsu), Takuichi Hirano (Tokyo City Univ.), Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) AP2024-21 |
For sub-THz communication applications, we developed an antenna array module with element pitch less than 1 wavelength (... [more] | AP2024-21 pp.1-4 |
| LQE, ED, CPM | 2023-11-30 14:20 |
Shizuoka | (Shizuoka) | Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] | ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
| MW, ED | 2021-01-29 14:25 |
Online | Online (Online) | Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] | ED2020-34 MW2020-87 pp.34-37 |
| MW, ED | 2019-01-17 15:00 |
Tokyo | Hitachi, Central Research Lab. (Tokyo) | Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] | ED2018-77 MW2018-144 pp.51-54 |
| ED | 2016-07-23 14:00 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House (Tokyo) | Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27 |
[more] | ED2016-27 pp.1-4 |
| ED | 2015-07-24 14:05 |
Ishikawa | IT Business Plaza Musashi 5F (Ishikawa) | Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] | ED2015-38 pp.9-13 |
| MW, ED | 2015-01-16 10:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Naoya Okamoto, Masaru Sato, Satoshi Masuda, Keiji Watanabe (Fujitsu Lab.) ED2014-127 MW2014-191 |
[more] | ED2014-127 MW2014-191 pp.59-63 |
| LQE, ED, CPM | 2014-11-28 13:15 |
Osaka | (Osaka) | Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 |
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] | ED2014-90 CPM2014-147 LQE2014-118 pp.81-84 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University (Osaka) | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| CPM, LQE, ED | 2010-11-11 16:50 |
Osaka | (Osaka) | High-Power GaN-HEMT for Millimeter-Wave Amplifier Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109 |
[more] | ED2010-153 CPM2010-119 LQE2010-109 pp.51-54 |
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