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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-01-28
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia) SDM2019-84
We develop strategies to maximize the performance and reliability of in-memory reinforcement learning with Hf1-xZrxO2 fe... [more] SDM2019-84
p.9
SDM, ICD, ITE-IST [detail] 2019-08-09
13:25
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama (TMC) SDM2019-50 ICD2019-15
We demonstrated a cross-point memory array composed of Ag ionic memory cell with sub-μA and selectorless operation and 1... [more] SDM2019-50 ICD2019-15
pp.85-88
ICD 2017-04-21
13:25
Tokyo   [Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)
Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16
In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] ICD2017-16
pp.85-88
ICD, SDM, ITE-IST [detail] 2016-08-03
10:40
Osaka Central Electric Club [Invited Talk] Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction
Kamimuta Yuuichi, Shosuke Fujii, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) SDM2016-62 ICD2016-30
 [more] SDM2016-62 ICD2016-30
pp.95-98
SDM 2016-06-29
10:00
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] SDM2016-32
pp.1-4
SDM 2014-11-06
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling and Simulation of Charge-Trapping Memory and Reliability Issues
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba) SDM2014-102
Charge-trapping memory is one of the most promising candidates as the next generation memory. The complicated operation ... [more] SDM2014-102
pp.37-42
 Results 1 - 6 of 6  /   
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