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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-09
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] SDM2018-76
pp.59-64
SDM, ICD, ITE-IST [detail] 2018-08-07
14:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] SDM2018-31 ICD2018-18
pp.31-34
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand High Efficiency Rectenna Design with High Impedance Antenna and SOI-MOSFET Connected Diode for RF Energy Harvesting
Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Shun Momose, Keisuke Noguchi, Kenji Itoh (KIT)
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET co... [more]
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting
Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more]
SDM, ICD, ITE-IST [detail] 2017-08-02
11:35
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] SDM2017-45 ICD2017-33
pp.109-114
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