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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2017-04-20
14:55		 Tokyo   [Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) ICD2017-7		 FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] ICD2017-7
pp.35-38
SDM 2017-01-30
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) SDM2016-134		 FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] SDM2016-134
pp.17-20
ICD, SDM 2006-08-18
15:25		 Hokkaido Hokkaido University Impact of Random Telegraph Signals on Scaling of Multilevel Flash Memories
Hideaki Kurata, Kazuo Otsuga, Akira Kotabe, Shinya Kajiyama, Taro Osabe, Yoshitaka Sasago (Hitachi), Shunichi Narumi, Kenji Tokami, Shiro Kamohara, Osamu Tsuchiya (Renesas) 		This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegra... [more] SDM2006-153 ICD2006-107
pp.161-166
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