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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, CPM, ED |
2020-11-26 13:50 |
Online |
Online |
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] |
ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
CPM, LQE, ED |
2019-11-21 13:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] |
ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
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