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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-01-31
Online Online [Invited Talk] Single-digit-nanometer magnetic tunnel junction technology for high-capacity STT-MRAM
Butsurin Jinnai, Junta Igarashi, Takanobu Shinoda, Kyota Watanabe, Takuya Funatsu, Hideo Sato, Shunsuke Fukami, Hideo Ohno (Tohoku Univ.) SDM2021-69
 [more] SDM2021-69
(Cancelled but technical report was issued)
A Mathematical Model for a Synapse Device Based on Spintronics
Taku Sato, Kikuchi Yushi, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (Tohoku Univ.) NLP2019-122
Recently, there is an increasing interest in a Spiking Neural Network (SNN) and Spike-Timing Dependent Plasticity (STDP)... [more] NLP2019-122
Okinawa Miyakojima Marine Terminal Mathematical modeling of spintronics neuron device based on thermal dynamics
Yushi Kikuchi, Taku Sato, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (TU) NLP2019-104
Spintronics device has been shown to reproduce some functionalities of synapse (i.e. spike-timing-dependent plasticity) ... [more] NLP2019-104
MRIS, ITE-MMS 2017-10-19
Niigata Kashiwazaki energy hall, Niigata [Invited Talk] Analog spintronics devices and its application to artificial neural networks
Hisanao Akima, William Borders, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Aleksandr Kurenkov, Yoshihiko Horio, Shigeo Sato, Hideo Ohno (Tohoku Univ.) MR2017-18
Developing dedicated integrated circuits operating with low power consumption is indispensable to realize a large scale ... [more] MR2017-18
Tokyo Kikai-Shinko-Kaikan Bldg. Autoassociative Memory System Using Analogue Magnetic Memory Device
Shouta Kurihara, Hisanao Akima, William A. Borders, Shunsuke Fukami, Satoshi Moriya, Aleksandr Kurenkov, Ryota Shimohashi, Yoshihiko Horio, Shigeo Sato, Hideo Ohno (Tohoku Univ.) NC2016-85
 [more] NC2016-85
ICD, SDM, ITE-IST [detail] 2016-08-03
Osaka Central Electric Club [Invited Talk] A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device -- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits --
Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31
Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-per... [more] SDM2016-63 ICD2016-31
ICD, SDM 2014-08-04
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications
Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara (NEC), Keizo Kinoshita, Shunsuke Fukami (Tohoku Univ.), Sadahiko Miura (NEC), Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.), Tadahiko Sugibayashi (NEC) SDM2014-69 ICD2014-38
 [more] SDM2014-69 ICD2014-38
ICD 2013-04-11
Ibaraki Advanced Industrial Science and Technology (AIST) Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI
Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] ICD2013-9
ICD 2012-04-24
Iwate Seion-so, Tsunagi Hot Spring (Iwate) A Non-Volatile Content Addressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells
Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji (NEC), Shunsuke Fukami (Tohoku Univ.), Hiroaki Honjo, Shinsaku Saito, Sadahiko Miura, Nobuyuki Ishiwata (NEC), Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2012-10
A 5-ns search operation of a non-volatile content addressable memory was demonstrated. The CAM macro, with a capacity of... [more] ICD2012-10
ICD, SDM 2009-07-17
Tokyo Tokyo Institute of Technology Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM
Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using per... [more] SDM2009-114 ICD2009-30
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