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Committee Date Time Place Paper Title / Authors Abstract Paper #
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(Primary: On-site, Secondary: Online)
[Special Talk] Development history of RF components for satellite communication
Shunsuke Okada, Chihiro Sakakibara, Hiruta Masaki (NECSpace) SAT2023-8 MICT2023-8
NECSpace have developed on-board equipment for satellite from the very beginning of space development history in Japan. ... [more] SAT2023-8 MICT2023-8
SDM 2020-01-28
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Masaki Noguchi, Tatsunori Isogai, Hiroyuki Yamashita, Keiichi Sawa, Ryota Fujitsuka, Takanori Yamanaka, Shunsuke Okada, Tomonori Aoyama, Fumiki Aiso, Junko Abe, Yoshiro Ogawa, Seiji Nakagawa, Hideshi Miyajima (KIOXIA) SDM2019-82
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated tunnel SiON and charge-trap SiN film... [more] SDM2019-82
LQE, ED, CPM 2014-11-28
Osaka   Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] ED2014-96 CPM2014-153 LQE2014-124
ED, LQE, CPM 2012-11-30
Osaka Osaka City University Selective MOVPE growth on nonpolar GaN substrates
Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] ED2012-77 CPM2012-134 LQE2012-105
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