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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2006-08-18
10:15
Hokkaido Hokkaido University Suppression effects of threshold voltage variation with Ni FUSI gate electrode for 45nm node and beyond LSTP and SRAM devices
Yasunori Okayama, Tomohiro Saito, Aname Oishi, Kazuaki Nakajima, Kouji Matsuo, Syuichi Taniguchi, Takatoshi Ono, Kazuhiro Nakayama, Ryota Watanabe, Ayumi Eiho, Taiki Komoda, Taiki Kimura, Mssahumi Hamaguchi, Yoichi Takekawa, Tomonori Aoyama (TOSHIBA)
 [more] SDM2006-145 ICD2006-99
pp.115-120
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