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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2016-11-18
11:20		 Saga Saga Univ. Effect of buffer trap on low-frequency equivalent circuit parameters of GaN HEMTs
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.) MW2016-128		 To examine the effect of the traps in the GaN HEMT, equivalent circuit parameters in the low-frequency was measured. Res... [more] MW2016-128
pp.69-72
ED, CPM, SDM 2015-05-28
16:40		 Aichi Venture Business Laboratory, Toyohashi University of Technology Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25		 In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] ED2015-23 CPM2015-8 SDM2015-25
pp.35-39
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