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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2024-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ. (Miyagi, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of THz-wave devices based on epi-layer transfer technique Hiroshi Ito, Tadao Nagatsuma (The Univ. of Tokyo), Tadao Ishibashi (Wavepackets)  ED2024-55 MWPTHz2024-67 |
Epi-layer transfer on a different material substrate is an important technique to improve device performance as well as ... [more] | ED2024-55 MWPTHz2024-67 pp.7-10 |
| MWPTHz | 2023-11-01 13:45 |
Online | Online (Zoom) (Online) | [Invited Talk]
Low-Noise Terahertz Wave Detection by Fermi-Level Managed Barrier Diode on SiC Platform Hiroshi Ito (The Univ. of Tokyo), Tadao Nagatsuma (Osaka Univ.), Tadao ishibashi (Wavepackets) MWPTHz2023-59 |
We developed novel THz-wave detectors fabricated on SiC platform implementing Fermi-level managed barrier (FMB) diodes f... [more] | MWPTHz2023-59 pp.5-8 |
| ED, THz | 2021-12-20 13:40 |
Miyagi | (Miyagi, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Noise Terahertz Wave Detection by Fermi-Level Managed Barrier Diode Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) ED2021-49 |
A broadband and low-noise THz-wave detector called Fermi-level managed barrier (FMB) diode was developed. The fabricated... [more] | ED2021-49 pp.6-9 |
| R, LQE, OPE, CPM, EMD | 2020-08-28 16:35 |
Online | Online (Online) | [Invited Talk]
Novel Terahertz-Wave Detector: Fermi-Level Managed Barrier Diode Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10 |
A hetero-barrier rectifier, Fermi-level managed barrier (FMB) diode, was developed for broadband and low-noise THz-wave ... [more] | R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10 pp.43-46 |
| LQE | 2018-02-23 09:35 |
Kanagawa | (Kanagawa) | [Special Invited Talk]
Ultrafast Carrier Transport in a Photodiode Structure Tadao Ishibashi (NEL-T) LQE2017-151 |
Photodiode response behaves variously being associated with nonequilibrium transport of photogenerated carriers. Observe... [more] | LQE2017-151 pp.1-6 |
| OPE | 2017-12-08 11:55 |
Okinawa | (Okinawa) | 600-GHz Coherent Terahertz Wave Combiner Yang Zhou, Goki Sakano, Yusuke Yamanaka (Kyushu Univ.), Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno), Kazutoshi Kato (Kyushu Univ.) OPE2017-115 |
For future high-speed wireless communication, the terahertz-wave transmission is attracting an attention. However, compa... [more] | OPE2017-115 pp.131-134 |
| ED | 2016-12-19 16:30 |
Miyagi | RIEC, Tohoku Univ (Miyagi) | Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84 |
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating... [more] | ED2016-84 pp.23-28 |
| LQE, OCS, OPE | 2013-10-25 11:15 |
Fukuoka | (Fukuoka) | High-performance InAlAs avalanche photodiode for 25-Gbit/s applications Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85 |
[more] | OCS2013-69 OPE2013-115 LQE2013-85 pp.99-102 |
| ED | 2012-12-18 12:05 |
Miyagi | Tohoku University (Miyagi) | Sub-Millimeter-Wave InP-Based Schottky-Barrier Diode Module for Zero-Biased Operation Hiroshi Ito (Kitasato Univ.), Yoshifumi Muramoto (NTT), Hiroshi Yamamoto (Kitasato Univ.), Tadao Ishibashi (NEL) ED2012-107 |
An InP/InGaAsP Schottky barrier diode (SBD) for zero-biased operation in the sub-millimeter-wave range has been develope... [more] | ED2012-107 pp.77-82 |
| MWP | 2011-10-28 13:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Recent Progress in High-Speed Photonic Semiconductor Devices Tadao Ishibashi, Atsushi Wakatsuki (NTT) MWP2011-46 |
Recent progress in high-speed photonic devices that have been developed primarily for 40 Gb/s system and 100 Gb/s cohere... [more] | MWP2011-46 pp.1-6 |
| OPE, LQE | 2010-06-25 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Composite Field MIC-PD for Low Bias and High Input Power Operation Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18 |
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] | OPE2010-16 LQE2010-18 pp.7-10 |
| OCS, OPE, LQE | 2005-11-04 13:30 |
Fukuoka | (Fukuoka) | Low driving voltage, 40-Gbit/s InP-based Mach-Zehnder modulator Nobuhiro Kikuchi, Ken Tsuzuki, Eiichi Yamada, Yasuo Shibata, Norihide Kashio, Hiroshi Yasaka (NTT), Tadao Ishibashi (NEL) |
[more] | OCS2005-65 OPE2005-95 LQE2005-103 pp.41-44 |
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