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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 47  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2021-12-20
13:00
Miyagi
(Primary: On-site, Secondary: Online)
[Invited Talk] Recent Progress in Carrier Down-Conversion Devices Between Optical Communication and Beyond 5G Wireless Communication
Akira Satou, Dai Nakajima, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Keisuke Kasai, Masato Yoshida, Taiichi Otsuji (Tohoku Univ.) ED2021-48
echnologies that seamlessly converges optical networks and wireless networks with small delay and low power consumption ... [more] ED2021-48
pp.1-5
ED, THz [detail] 2019-12-23
14:55
Miyagi   Observation of Broadband THz Emission from Near-IR Laser-Pumped Multilayer Graphene
Takahiro Komiyama, Takayuki Watanabe (Tohoku Univ.), Sergey Morozov, Mikhail Fadeev, Vladimir Utochkin (IPM-RAS), Hirokazu Fukidome, Akira Satou, Taiichi Otsuji (Tohoku Univ.) ED2019-80
We experimentally observe THz emission from non-Bernal-stacked multilayer graphene thermally decomposed on a C-face SiC ... [more] ED2019-80
pp.17-20
ED, THz [detail] 2019-12-24
10:05
Miyagi   Preliminary Study of Photocurrent Output from the Gate Electrode of a Grating-Gate Plasmonic THz Detector
Taku Saito, Masaya Suzuki, Tomotaka Hosotani, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN.), Akira Satou (Tohoku Univ.) ED2019-88
We have developed grating-gate plasmonic THz detectors, which are promising as room-temperature-operating, sensitive, hi... [more] ED2019-88
pp.49-52
ED, THz 2018-12-17
16:35
Miyagi RIEC, Tohoku Univ. Direct determination of the interlayer van der Waals bonding force in graphene by thermal decomposition of SiC
Tadao Tanabe, Tang Chao, Yoshiki Fuse, Kenta Sugawara, Takahiro Komiyama, Yohei Sato, Hirokazu Fukidome, Taiichi Otsuji, Yutaka Oyama (Tohoku Univ.) ED2018-59
Two-dimensional (2D) layered materials have attracted much interest because of their unique crystallographic structure a... [more] ED2018-59
pp.25-26
ED, THz 2017-12-19
15:10
Miyagi RIEC, Tohoku Univ Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor
Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91
We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-... [more] ED2017-91
pp.73-76
ED 2016-12-19
16:05
Miyagi RIEC, Tohoku Univ Design and fabrication of terahertz detectors based on 180 nm CMOS process technology
Kosuke Wakita, Masayuki Ikebe (Hokkaido Univ.), Stevanus Arnold, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiroaki Minamide (RIKEN), Eiichi Sano (Hokkaido Univ.) ED2016-83
Use of terahertz waves for imaging is gaining increased interest. A CMOS cascode amplifier biased near the threshold vol... [more] ED2016-83
pp.17-22
ED 2016-12-19
16:30
Miyagi RIEC, Tohoku Univ Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating... [more] ED2016-84
pp.23-28
ED 2016-12-20
09:50
Miyagi RIEC, Tohoku Univ Terahertz response of nanocarbon materials
Takuya Miyajima (Hokkaido Univ.), Hisashi Sugime (Waseda Univ.), Kenta Sugawara, Takayuki Watanabe, Taiichi Otsuji (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.) ED2016-89
Research on new materials and structures is important to devise novel terahertz (THz) semiconductor devices. We focus on... [more] ED2016-89
pp.49-54
CS, OCS
(Joint)
2016-01-22
09:50
Kagoshima Kagoshima University, Korimoto Campus, Inamori Auditorium Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network
Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] OCS2015-95
pp.41-46
ED 2015-12-21
15:00
Miyagi RIEC, Tohoku Univ Extraction of intrinsic parameters in graphene-channel FET
Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] ED2015-95
pp.25-30
ED 2015-12-22
10:05
Miyagi RIEC, Tohoku Univ Terahertz Emission and Detection from Double Graphene Layer Heterostructures
Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.) ED2015-103
We report on experimental observation of terahertz emission and detection in a double graphene layer hetero structure wh... [more] ED2015-103
pp.71-76
ED 2015-12-22
10:45
Miyagi RIEC, Tohoku Univ Terahertz response of carbon nanotube forest under optical illumination
Takuya Miyajima, Taro Itatsu (Hokkaido Univ.), Hisashi Sugime (Cambridge Univ.), Stevanus Arnold, Taiichi Otsuji (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.) ED2015-104
 [more] ED2015-104
pp.77-82
ED 2014-12-22
14:10
Miyagi   Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs
Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] ED2014-100
pp.9-13
ED 2014-12-23
10:05
Miyagi   Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors
Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.) ED2014-109
We compare the measured broadband characteristics of the responsivity of asymmetric dual-grating-gate high-elect... [more] ED2014-109
pp.63-67
ED 2014-12-23
14:10
Miyagi   Enhanced terahertz emission from monolayer graphene with metal mesh structure
Taro Itatsu, Eiichi Sano (Hokkaido Univ.), Yuhei Yabe, Victor Ryhzii, Taiichi Otsuji (Tohoku Univ.) ED2014-114
In order to utilizing terahertz (THz) region, the development of compact THz oscillators is essential. We aimed at the d... [more] ED2014-114
pp.91-96
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
16:55
Kyoto Doshisha University [Invited Talk] Ultrahigh-Frequency Optoelectronic Device Technology for Future Optical-Wireless Fusion Network Systems
Taiichi Otsuji (Tohoku Univ.) PN2013-70 OPE2013-184 LQE2013-170 EST2013-119 MWP2013-90
Growing demand on broadband ubiquitous wireless communication services assuring the resilience and robustness against th... [more] PN2013-70 OPE2013-184 LQE2013-170 EST2013-119 MWP2013-90
pp.221-226
ED 2013-12-17
13:30
Miyagi Research Institute of Electrical Communication Tohoku University [Invited Talk] Novel concepts and technology for terahertz device applications using graphene
Victor Ryzhii, Akira Satou (Tohoku Univ.), Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2013-106
Recent progress in study on terahertz device applications using graphene will be reviewed. The device concepts exploitin... [more] ED2013-106
pp.91-96
ED 2013-12-17
14:10
Miyagi Research Institute of Electrical Communication Tohoku University Ultrahigh Sensitive and Frequency-Tunable Terahertz Detection by Asymmetric Dual-Grating-Gate HEMTs
Tetsuya Kawasaki, Shinya Hatakeyama, Yuki Kurita (Tohoku Univ.), Guillaume Ducournau (IEMN), Dominique Coquillat (Univ. Montpellier 2 & CNRS), Kengo Kobayashi, Akira Satou (Tohoku Univ.), Yahya M. Meziani (Univ. Salamanca), Vyacheslav. V. Popov (Kotelnikov Inst. Radio Eng. Electron), Wojciech Knap (Univ. Montpellier 2 & CNRS), Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2013-107
We report on ultrahigh sensitive and frequency-tunable terahertz (THz) detectors by our original asymmetric dual-grating... [more] ED2013-107
pp.97-100
EST 2013-05-10
13:00
Kanagawa NTT Science and Core Technology Laboratory Group Numerical study of terahertz two-dimensional plasmons in graphene
Akira Satou, Victor Ryzhii (Tohoku Univ.), Vladimir Mitin, Fedir Vasko (Univ. at Buffalo), Taiichi Otsuji (Tohoku Univ.) EST2013-4
We develop a numerical model for simulation of plasmons in graphene with grating-gate structures, based on the Boltzmann... [more] EST2013-4
pp.15-20
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
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