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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 25  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2023-04-22
09:40
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT
Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.) SDM2023-7 OME2023-7
High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is att... [more] SDM2023-7 OME2023-7
pp.27-29
SDM, OME 2023-04-22
10:05
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne
Tatsuya Okada, C. J. Koswaththage (Univ. Ryukyus), Takashi Kajiwar, Taizoh Sadoh (Kyushu Univ), Takashi Noguchi (Univ. Ryukyus) SDM2023-8 OME2023-8
For realizing high crystallinity InSb films on low-cost insulating substrate, we investigate the crystallization using R... [more] SDM2023-8 OME2023-8
pp.30-31
SDM, OME 2023-04-22
10:30
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
Crystallization of InSb Films on Glass by RTA
Takashi Kajiwara (Kyushu Univ.), Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi (Univ. of the Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2023-9 OME2023-9
To achieve low-cost and high-mobility InSb thin films, we studied the crystallization of InSb films sputtered on a glass... [more] SDM2023-9 OME2023-9
pp.32-33
SDM, OME 2020-04-13
17:20
Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)
Effects of a-Si under-layer on solid-phase crystallization of GeSn/insulator
Yuta Tan, Daiki Tsuruta, Taizoh Sadoh (Kyushu univ.)
 [more]
SDM 2018-10-17
15:20
Miyagi Niche, Tohoku Univ. Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] SDM2018-54
pp.11-14
SDM, OME 2016-04-08
15:35
Okinawa Okinawa Prefectural Museum & Art Museum Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization
Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2016-7 OME2016-7
 [more] SDM2016-7 OME2016-7
pp.29-30
OME, SDM 2015-04-30
10:40
Okinawa Oh-hama Nobumoto Memorial Hall Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics
Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] SDM2015-10 OME2015-10
pp.39-40
SDM, OME 2014-04-10
14:40
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth
Jong-Hyeok Park, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2014-4 OME2014-4
 [more] SDM2014-4 OME2014-4
pp.17-20
OME, SDM 2013-04-25
14:30
Kagoshima Yakusima Environmental Culture Village Center Formation of laterally-graded Ge based hetero-structure
Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2013-5 OME2013-5
 [more] SDM2013-5 OME2013-5
pp.17-23
SDM, ED
(Workshop)
2012-06-27
18:15
Okinawa Okinawa Seinen-kaikan Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth
Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
 [more]
SDM, ED
(Workshop)
2012-06-27
18:30
Okinawa Okinawa Seinen-kaikan Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique
Jonghyeok Park, Tsuneharu Suzuki, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.)
 [more]
SDM, OME 2012-04-28
10:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Seed-less melting growth of Ge(Si) on Insulator -- Large grain formation by Si segregation --
Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13
 [more] SDM2012-13 OME2012-13
pp.61-62
SDM, OME 2012-04-28
11:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer
Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] SDM2012-16 OME2012-16
pp.71-73
SDM 2011-12-16
16:00
Nara NAIST Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] SDM2011-145
pp.71-76
OME, SDM 2011-04-15
11:05
Saga AIST Kyushu Center Role of vacancy annihilation in electrical activation of P implanted in Ge
Mohammad Anisuzzaman, Taizoh Sadoh (Kyushu Univ.) SDM2011-4 OME2011-4
Due to the scaling limit faced by Si CMOS technology, much interest is being given on Ge. However, development of the Ge... [more] SDM2011-4 OME2011-4
pp.13-16
SDM, OME 2010-04-23
11:20
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] SDM2010-4 OME2010-4
pp.13-17
SDM, OME 2010-04-23
15:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process
Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-11 OME2010-11
We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (~400 μm) by... [more] SDM2010-11 OME2010-11
pp.49-52
SDM, OME 2010-04-23
15:20
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting
Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] SDM2010-12 OME2010-12
pp.53-57
SDM, ED 2009-06-26
09:00
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) ED2009-91 SDM2009-86
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI... [more] ED2009-91 SDM2009-86
pp.177-180
OME, SDM 2009-04-24
16:15
Saga AIST Kyushu-center Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] SDM2009-5 OME2009-5
pp.19-23
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