Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, OME |
2023-04-22 09:40 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.) SDM2023-7 OME2023-7 |
High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is att... [more] |
SDM2023-7 OME2023-7 pp.27-29 |
SDM, OME |
2023-04-22 10:05 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne Tatsuya Okada, C. J. Koswaththage (Univ. Ryukyus), Takashi Kajiwar, Taizoh Sadoh (Kyushu Univ), Takashi Noguchi (Univ. Ryukyus) SDM2023-8 OME2023-8 |
For realizing high crystallinity InSb films on low-cost insulating substrate, we investigate the crystallization using R... [more] |
SDM2023-8 OME2023-8 pp.30-31 |
SDM, OME |
2023-04-22 10:30 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Crystallization of InSb Films on Glass by RTA Takashi Kajiwara (Kyushu Univ.), Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi (Univ. of the Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2023-9 OME2023-9 |
To achieve low-cost and high-mobility InSb thin films, we studied the crystallization of InSb films sputtered on a glass... [more] |
SDM2023-9 OME2023-9 pp.32-33 |
SDM, OME |
2020-04-13 17:20 |
Okinawa |
Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
Effects of a-Si under-layer on solid-phase crystallization of GeSn/insulator Yuta Tan, Daiki Tsuruta, Taizoh Sadoh (Kyushu univ.) |
[more] |
|
SDM |
2018-10-17 15:20 |
Miyagi |
Niche, Tohoku Univ. |
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] |
SDM2018-54 pp.11-14 |
SDM, OME |
2016-04-08 15:35 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2016-7 OME2016-7 |
[more] |
SDM2016-7 OME2016-7 pp.29-30 |
OME, SDM |
2015-04-30 10:40 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] |
SDM2015-10 OME2015-10 pp.39-40 |
SDM, OME |
2014-04-10 14:40 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth Jong-Hyeok Park, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2014-4 OME2014-4 |
[more] |
SDM2014-4 OME2014-4 pp.17-20 |
OME, SDM |
2013-04-25 14:30 |
Kagoshima |
Yakusima Environmental Culture Village Center |
Formation of laterally-graded Ge based hetero-structure Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2013-5 OME2013-5 |
[more] |
SDM2013-5 OME2013-5 pp.17-23 |
SDM, ED (Workshop) |
2012-06-27 18:15 |
Okinawa |
Okinawa Seinen-kaikan |
Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-27 18:30 |
Okinawa |
Okinawa Seinen-kaikan |
Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique Jonghyeok Park, Tsuneharu Suzuki, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) |
[more] |
|
SDM, OME |
2012-04-28 10:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Seed-less melting growth of Ge(Si) on Insulator
-- Large grain formation by Si segregation -- Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13 |
[more] |
SDM2012-13 OME2012-13 pp.61-62 |
SDM, OME |
2012-04-28 11:10 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16 |
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] |
SDM2012-16 OME2012-16 pp.71-73 |
SDM |
2011-12-16 16:00 |
Nara |
NAIST |
Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] |
SDM2011-145 pp.71-76 |
OME, SDM |
2011-04-15 11:05 |
Saga |
AIST Kyushu Center |
Role of vacancy annihilation in electrical activation of P implanted in Ge Mohammad Anisuzzaman, Taizoh Sadoh (Kyushu Univ.) SDM2011-4 OME2011-4 |
Due to the scaling limit faced by Si CMOS technology, much interest is being given on Ge. However, development of the Ge... [more] |
SDM2011-4 OME2011-4 pp.13-16 |
SDM, OME |
2010-04-23 11:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4 |
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] |
SDM2010-4 OME2010-4 pp.13-17 |
SDM, OME |
2010-04-23 15:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-11 OME2010-11 |
We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (~400 μm) by... [more] |
SDM2010-11 OME2010-11 pp.49-52 |
SDM, OME |
2010-04-23 15:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12 |
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] |
SDM2010-12 OME2010-12 pp.53-57 |
SDM, ED |
2009-06-26 09:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) ED2009-91 SDM2009-86 |
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI... [more] |
ED2009-91 SDM2009-86 pp.177-180 |
OME, SDM |
2009-04-24 16:15 |
Saga |
AIST Kyushu-center |
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] |
SDM2009-5 OME2009-5 pp.19-23 |