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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2012-08-02
13:00
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Lecture] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] SDM2012-68 ICD2012-36
pp.29-32
ICD, SDM 2012-08-02
13:25
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37
Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with convent... [more] SDM2012-69 ICD2012-37
pp.33-36
SDM, ED
(Workshop)
2012-06-29
09:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, Univ. of Tokyo)
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation CMOS with maximum power efficiency can... [more]
ICD, SDM 2010-08-27
16:00
Hokkaido Sapporo Center for Gender Equality Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] SDM2010-150 ICD2010-65
pp.143-148
ICD, SDM 2008-07-17
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] SDM2008-135 ICD2008-45
pp.41-46
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