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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD, SDM |
2012-08-02 13:00 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Lecture]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36 |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] |
SDM2012-68 ICD2012-36 pp.29-32 |
ICD, SDM |
2012-08-02 13:25 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37 |
Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with convent... [more] |
SDM2012-69 ICD2012-37 pp.33-36 |
SDM, ED (Workshop) |
2012-06-29 09:45 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, Univ. of Tokyo) |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation CMOS with maximum power efficiency can... [more] |
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ICD, SDM |
2010-08-27 16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65 pp.143-148 |
ICD, SDM |
2008-07-17 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] |
SDM2008-135 ICD2008-45 pp.41-46 |
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