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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2010-04-22 09:00 |
Kanagawa |
Shonan Institute of Tech. |
[Invited Talk]
A Configurable SRAM with Constant-Negative-Level Write Buffer for Low Voltage Operation with 0.149μm2 Cell in 32nm High-k Metal Gate CMOS Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe (Toshiba Corp.) ICD2010-1 |
This paper presents a configurable SRAM for low voltage operation with Constant-Negative-Level Write Buffer (CNL-WB) and... [more] |
ICD2010-1 pp.1-6 |
ICD |
2009-04-14 10:15 |
Miyagi |
Daikanso (Matsushima, Miyagi) |
A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver Yuki Fujimura, Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe (Toshiba Co.) ICD2009-5 |
We present a dual-power-supply SRAM with 0.179$\mu$m2 cell in 40nm CMOS, which is 10% smaller than the SRAM scaling tren... [more] |
ICD2009-5 pp.21-26 |
ICD |
2008-04-17 09:25 |
Tokyo |
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[Invited Talk]
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with an Asymmetrical Unit β-ratio Memory Cell Takahiko Sasaki, Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida (Toshiba Corp.), Akihito Tohata (Toshiba Microelectronics Corp.), Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka (Toshiba Corp.) ICD2008-1 |
A single-power supply $64kB$ SRAM is fabricated in a $45nm$ bulk CMOS technology. The SRAM operates at $1GHz$ with a $0.... [more] |
ICD2008-1 pp.1-6 |
NLP |
2007-08-06 16:50 |
Shizuoka |
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Control of directional emission by using electrically and optically injected quasi-stadium laser diodes Takahiko Sasaki, Yutaka Nakae (ATR), Takehiro Fukushima (ATR/Okayama Pref. Univ.), Takahisa Harayama (ATR) NLP2007-50 |
The lasing characteristics of 2-dimensional (2D) stadium shaped semiconductor laser resonators, which can be represented... [more] |
NLP2007-50 pp.77-81 |
NLP |
2007-08-06 17:15 |
Shizuoka |
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Lasing mode observation in quasi-stadium laser diodes. Yutaka Nakae (ATR), Hiroki Takehana (ATR/Konan Univ.), Takahiko Sasaki (ATR), Takehiro Fukushima (ATR/Okayama Prefecutural Univ.), Takahisa Harayama (ATR) NLP2007-51 |
We fabricated quasi-stadium laser diode which has a ‘window’ on the top of cavity by ion-etching technique to epitaxial ... [more] |
NLP2007-51 pp.83-85 |
ICD, SDM |
2006-08-18 11:40 |
Hokkaido |
Hokkaido University |
Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm node and beyond Hirohisa Kawasaki (TAEC), Satoshi Inaba, Kimitoshi Okano, Akio Kaneko (Toshiba Semicon.), Atsushi Yagishita (TAEC), Takashi Izumida, Takahisa Kanemura, Takahiko Sasaki, Nobuaki Otsuka, Nobutoshi Aoki, Kyoichi Suguro, Kazuhiro Eguchi, Yoshitaka Tsunashima (Toshiba Semicon.), Kazunari Ishimaru (TAEC), Hidemi Ishiuchi (Toshiba Semicon.) |
[more] |
SDM2006-147 ICD2006-101 pp.127-132 |
ICD, SDM |
2005-08-19 14:40 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Robust Device Design in FinFET SRAM for hp22nm Technology Node Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] |
SDM2005-154 ICD2005-93 pp.67-72 |
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