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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
PRMU, IBISML, IPSJ-CVIM [detail] 2023-03-02
10:35
Hokkaido Future University Hakodate
(Primary: On-site, Secondary: Online)
PRMU2022-68 IBISML2022-75 (To be available after the conference date) [more] PRMU2022-68 IBISML2022-75
pp.54-58
SANE 2022-08-19
09:30
Hokkaido  
(Primary: On-site, Secondary: Online)
Impact of hardware imperfections in Chirp Sequence radar using inter-radar interference suppression
Takahiro Maruyama (Ibaraki Univ), Masahiro Umehira (Nanzan Univ), Xiaoyan Wang, Shigeki Takeda (Ibaraki Univ) SANE2022-45
 [more] SANE2022-45
pp.68-73
SAT, SANE
(Joint)
2022-02-25
15:35
Online Online A Novel Chirp Sequence Radar using Inter-radar Interference Suppression for Spectrum Efficiency Enhancement
Takahiro Maruyama, Masahiro Umehira, Yuu Watanabe, Xiaoyan Wang, Shigeki Takeda (Ibaraki Univ.) SANE2021-103
 [more] SANE2021-103
pp.31-36
SANE 2021-12-16
15:25
Chiba Chiba University
(Primary: On-site, Secondary: Online)
An Interpolation-based Vehicular Speed Measurement Technique for Chirp Sequence Radar using Narrowband Interference Canceller
Takahiro Maruyama (Ibaraki Univ), Masahiro Umehira (Nanzan Univ), Watanabe Yu, Takeda Shigeki, Wang Xiaoyan (Ibaraki Univ) SANE2021-77
 [more] SANE2021-77
pp.79-84
SDM 2018-10-17
14:00
Miyagi Niche, Tohoku Univ. [Invited Talk] Fin-FET MONOS for Next Generation Automotive-MCU
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas) SDM2018-52
 [more] SDM2018-52
pp.1-5
SDM 2018-01-30
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) SDM2017-94
Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node em... [more] SDM2017-94
pp.13-16
ICD 2017-04-20
14:55
Tokyo   [Invited Lecture] First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) ICD2017-7
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] ICD2017-7
pp.35-38
SDM 2017-01-30
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) SDM2016-134
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] SDM2016-134
pp.17-20
CPM, SDM, ED 2011-05-19
13:00
Aichi Nagoya Univ. (VBL) Lateral overgrowth of GaN by ammonia-based metal-organic molecular beam epitaxy
Shota Uchiyama, Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka (Meijo Univ.) ED2011-8 CPM2011-15 SDM2011-21
Selective growth of GaN was performed using ammonia-based metal-organic molecular beam epitaxy. Growth temperature was f... [more] ED2011-8 CPM2011-15 SDM2011-21
pp.39-43
CPM, ED, SDM 2008-05-16
12:50
Aichi Nagoya Institute of Technology Lateral growth of GaAs(001)microchannel epitaxy grown by temperature difference method
Yasumasa Tejima, Kenshiro Suzuki, Shigeya Naritsuka, Takahiro Maruyama (Meijo Univ.) ED2008-15 CPM2008-23 SDM2008-35
 [more] ED2008-15 CPM2008-23 SDM2008-35
pp.71-74
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