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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SCE | 2024-01-23 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] | |
| SDM | 2023-11-09 15:55 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)  SDM2023-67 |
[more] | SDM2023-67 pp.20-25 |
| SDM | 2023-11-10 13:10 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] | SDM2023-70 p.35 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 15:25 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] | SDM2023-40 ICD2023-19 pp.22-27 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:10 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] | SDM2023-41 ICD2023-20 pp.28-31 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:35 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] | SDM2023-42 ICD2023-21 pp.32-35 |
| SDM | 2023-06-26 10:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] | SDM2023-28 pp.5-6 |
| MVE, IPSJ-CVIM, VRSJ-SIG-MR | 2023-01-27 10:25 |
Nara | Nara Institute of Science and Technology (Primary: On-site, Secondary: Online) |
Comparison of brain activity when viewing presentation videos with different features
-- Evaluation based on topic difficulty and explanation skills -- Takahiro Morita, Liang Zhang, Atsushi Nagate (SoftBank), Maryam Alimardani, Shuichi Nishio (Osaka Univ) MVE2022-41 |
EEG was used to sense brain activity when viewing four types of presentation videos with different "topic difficulty" an... [more] | MVE2022-41 pp.37-42 |
| MRIS, ITE-MMS | 2022-12-08 13:30 |
Ehime | Ehime Univ. + Online (Primary: On-site, Secondary: Online) |
3D domain wall motion memory with artificial ferromagnet Teruo Ono, Yu Min Hung, Heechan Jang, Feifan Ye, Ryosuke Hisatomi, Youichi Shiota, Takahiro Moriyama (Kyoto Univ.) MRIS2022-18 |
[more] | MRIS2022-18 pp.1-6 |
| SDM | 2022-11-11 13:00 |
Online | Online | [Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] | SDM2022-74 p.49 |
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:05 |
Online | [Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] | SDM2022-46 ICD2022-14 pp.54-59 |
|
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:50 |
Online | TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15 |
[more] | SDM2022-47 ICD2022-15 pp.60-63 |
|
| IMQ, HIP | 2022-07-08 13:25 |
Hokkaido | Satellite Campus, Sapporo City University | Estimating the subjective impression of presentation viewers using EEG Takahiro Morita, Liang Zhang, Atsushi Nagate (SoftBank), Maryam Alimardani, Shuichi Nishio (Osaka Univ) IMQ2022-5 HIP2022-36 |
(To be available after the conference date) [more] | IMQ2022-5 HIP2022-36 pp.5-10 |
| RECONF, VLD, CPSY, IPSJ-ARC, IPSJ-SLDM [detail] | 2022-01-24 09:55 |
Online | Online | Study on Reverse Converters for RNS moduli set {2^k,2^n+1,2^n-1} using Signed-Digit numbers Takahiro Morii, Yuuki Tanaka, Shugang Wei (Gunma Univ.) VLD2021-50 CPSY2021-19 RECONF2021-58 |
In this study, we propose reverse converters for moduli set ${2^k,2^n+1,2^n-1}$ that convert residue number system to we... [more] | VLD2021-50 CPSY2021-19 RECONF2021-58 pp.7-12 |
| SDM | 2021-10-21 14:30 |
Online | Online | [Invited Talk]
Device and Integration Technologies Realizing Silicon Quantum Computers Takahiro Mori (AIST) SDM2021-49 |
[more] | SDM2021-49 p.20 |
| SDM, ICD, ITE-IST [detail] | 2021-08-17 10:15 |
Online | Online | [Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1 |
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] | SDM2021-30 ICD2021-1 pp.1-6 |
| SDM | 2021-06-22 15:20 |
Online | Online | [Invited Lecture]
Development of TFET-based qubits enabling high-temperature operation to realize silicon-based quantum computing Takahiro Mori (AIST) SDM2021-25 |
Quantum computers have been attractive because they could realize large-scale and highly complicated calculations that c... [more] | SDM2021-25 p.16 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 09:30 |
Online | Online | [Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6 |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] | SDM2020-6 ICD2020-6 pp.25-30 |
| SDM | 2017-11-09 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63 |
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] | SDM2017-63 pp.11-14 |
| SDM, ICD, ITE-IST [detail] | 2017-07-31 12:00 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | TCAD Simulation of C-TFET Circuit with Drain Offset Structure Hidehiro Asai, Takahiro Mori, Junich Hattori, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa (AIST) SDM2017-35 ICD2017-23 |
We have performed TCAD simulation for a ring oscillator composed of complementary Tunnel Field Effect Transistors (C-TFE... [more] | SDM2017-35 ICD2017-23 pp.21-24 |
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