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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2018-04-20
13:50		 Tokyo   [Invited Talk] Memory LSI using crystalline oxide semiconductor FET
Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12		 FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-sta... [more] ICD2018-12
pp.47-52
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