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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
11:30		 Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers
Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) SDM2023-29		 We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM)... [more] SDM2023-29
pp.7-10
SDM 2022-06-21
16:40		 Aichi Nagoya Univ. VBL3F [Invited Talk] Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech) SDM2022-30		  [more] SDM2022-30
pp.23-26
SDM 2017-06-20
15:35		 Tokyo Campus Innovation Center Tokyo Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs
Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.) SDM2017-28		  [more] SDM2017-28
pp.35-38
SDM 2016-06-29
16:20		 Tokyo Campus Innovation Center Tokyo [Invited Lecture] Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET
Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45		 In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] SDM2016-45
pp.69-74
SDM 2011-07-04
09:00		 Aichi VBL, Nagoya Univ. High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50		 This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] SDM2011-50
pp.1-5
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