IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-01-28
15:05
Online Online [Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure
Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.) SDM2020-52
We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si h... [more] SDM2020-52
pp.13-16
SDM 2014-06-19
14:40
Aichi VBL, Nagoya Univ. [Invited Lecture] Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions
Katsuhiro Tomioka (Hokkaido Univ./JST), Takashi Fukui (Hokkaido Univ.) SDM2014-54
 [more] SDM2014-54
pp.59-63
SDM 2014-01-29
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Integration of III-V Nanowires on Si : From High-Performance Vertical FET to Steep-Slope Switch
Katsuhiro Tomioka (Hokkaido Univ./JST-PRESTO), Takashi Fukui (Hokkaido Univ.) SDM2013-139
 [more] SDM2013-139
pp.17-22
SDM, ED 2009-02-26
15:00
Hokkaido Hokkaido Univ. Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) ED2008-227 SDM2008-219
 [more] ED2008-227 SDM2008-219
pp.19-22
SDM, ED 2008-07-09
10:00
Hokkaido Kaderu2・7 [Keynote Address] III-V Semiconductor Epitaxial Nanowires and Their Applications
Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.) ED2008-39 SDM2008-58
 [more] ED2008-39 SDM2008-58
p.1
ED, SDM 2008-01-30
13:55
Hokkaido   Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE
Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) ED2007-238 SDM2007-249
Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surr... [more] ED2007-238 SDM2007-249
pp.5-10
 Results 1 - 6 of 6  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan