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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2021-01-28 15:05 |
Online |
Online |
[Invited Talk]
Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.) SDM2020-52 |
We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si h... [more] |
SDM2020-52 pp.13-16 |
SDM |
2014-06-19 14:40 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions Katsuhiro Tomioka (Hokkaido Univ./JST), Takashi Fukui (Hokkaido Univ.) SDM2014-54 |
[more] |
SDM2014-54 pp.59-63 |
SDM |
2014-01-29 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Integration of III-V Nanowires on Si : From High-Performance Vertical FET to Steep-Slope Switch Katsuhiro Tomioka (Hokkaido Univ./JST-PRESTO), Takashi Fukui (Hokkaido Univ.) SDM2013-139 |
[more] |
SDM2013-139 pp.17-22 |
SDM, ED |
2009-02-26 15:00 |
Hokkaido |
Hokkaido Univ. |
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) ED2008-227 SDM2008-219 |
[more] |
ED2008-227 SDM2008-219 pp.19-22 |
SDM, ED |
2008-07-09 10:00 |
Hokkaido |
Kaderu2・7 |
[Keynote Address]
III-V Semiconductor Epitaxial Nanowires and Their Applications Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.) ED2008-39 SDM2008-58 |
[more] |
ED2008-39 SDM2008-58 p.1 |
ED, SDM |
2008-01-30 13:55 |
Hokkaido |
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Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) ED2007-238 SDM2007-249 |
Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surr... [more] |
ED2007-238 SDM2007-249 pp.5-10 |
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