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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-12-04
11:20		 Nara NAIST Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs
Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.) SDM2009-157		 The hysteresis observed in the transfer characteristics of n-channel poly-Si TFTs are experimentally investigated and po... [more] SDM2009-157
pp.35-38
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