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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2017-08-02
11:35		 Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33		 The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] SDM2017-45 ICD2017-33
pp.109-114
ICD, SDM, ITE-IST [detail] 2016-08-03
14:40		 Osaka Central Electric Club PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) SDM2016-66 ICD2016-34		 We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltag... [more] SDM2016-66 ICD2016-34
pp.117-121
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