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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-25
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech) ED2023-68 MW2023-160		 (To be available after the conference date) [more] ED2023-68 MW2023-160
pp.11-14
ED, CPM, LQE 2021-11-26
16:50		 Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48		  [more] ED2021-36 CPM2021-70 LQE2021-48
pp.95-98
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