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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-11-11 09:30 |
Online | Online (Online) | [Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research)  SDM2022-71 |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] | SDM2022-71 pp.32-39 |
| SDM | 2022-10-19 16:30 |
Online | Online (Online) | [Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62 |
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] | SDM2022-62 pp.34-37 |
| SDM | 2019-06-21 11:00 |
Aichi | Nagoya Univ. VBL3F (Aichi) | Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.) SDM2019-25 |
[more] | SDM2019-25 pp.1-4 |
| SDM | 2018-06-25 11:40 |
Aichi | Nagoya Univ. VBL3F (Aichi) | Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] | SDM2018-18 pp.11-14 |
| SDM | 2015-06-19 14:15 |
Aichi | VBL, Nagoya Univ. (Aichi) | Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] | SDM2015-48 pp.51-55 |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. (Aichi) | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM | 2013-06-18 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47 |
[more] | SDM2013-47 pp.19-23 |
| SDM | 2013-06-18 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
Implementation of High-k Gate Dielectrics in SiC Power MOSFET Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59 |
[more] | SDM2013-59 pp.77-80 |
| SDM | 2013-06-18 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] | SDM2013-61 pp.87-90 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan (Okinawa) | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
| SDM | 2012-06-21 10:20 |
Aichi | VBL, Nagoya Univ. (Aichi) | High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] | SDM2012-47 pp.23-26 |
| SDM | 2012-06-21 11:55 |
Aichi | VBL, Nagoya Univ. (Aichi) | Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] | SDM2012-51 pp.43-46 |
| SDM | 2011-07-04 15:40 |
Aichi | VBL, Nagoya Univ. (Aichi) | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65 |
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] | SDM2011-65 pp.87-92 |
| SDM | 2010-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] | SDM2010-175 pp.23-28 |
| SDM | 2009-06-19 10:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo (Tokyo) | Fundamental Study on GeO2/Ge Interface and its Electrical Properties Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.) SDM2009-29 |
[more] | SDM2009-29 pp.15-20 |
| SDM | 2008-12-05 13:15 |
Kyoto | Kyoto University, Katsura Campus, A1-001 (Kyoto) | [Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] | SDM2008-188 pp.21-25 |
| SDM, OME | 2008-04-12 10:35 |
Okinawa | Okinawa Seinen Kaikan (Okinawa) | Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) SDM2008-18 OME2008-18 |
Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We hav... [more] | SDM2008-18 OME2008-18 pp.89-94 |
| SDM | 2007-06-08 14:40 |
Hiroshima | Hiroshima Univ. ( Faculty Club) (Hiroshima) | Formation and characterization of Ge$_3$N$_4$ thin layers Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.) SDM2007-49 |
We have investigated the nitridation of germanium substrate by our original high-density plasma source. Pure amorphous G... [more] | SDM2007-49 pp.97-100 |
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