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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2022-08-04
Hokkaido   [Invited Talk] First approach to producing vaccines from plants -- Hydroponic culture of Nicotiana benthamiana --
Mayumi B. Takeyama (WOW Tokyo Tech../Kitami Inst. Technol.), Hikaru Murakami, Masaru Sato (Kitami Inst.Technol.), Shiho Torashima, Koji Kashima, Takayuki Ohba (WOW Tokyo Tech.) CPM2022-11
 [more] CPM2022-11
SDM 2021-02-05
Online Online [Invited Talk] Bumpless Build Cube (BBCube) using Wafer-on-Wafer (WOW) Technology with 3D Redundancy Scheme
Shinji Sugatani, Norio Chujo, Koji Sakui, Hiroyuki Ryoson, Tomoji Nakamura, Takayuki Ohba (Titech) SDM2020-61
An application of vertically replaceable memory block architecture
scheme hereinafter referred to as “3D redundancy” fo... [more]
CPM 2019-11-07
Fukui Fukui univ. Development of Methods for Early Detection of Plant Growth Disorder by Hyper/Multispectral Camera under Artificial Light
Koji Kashima, Shiho Torashima, Hiroyuki Ito, Katsuro Fukozu, Takayuki Ohba (Tokyo Tech)
SDM 2014-02-28
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration
Yoriko Mizushima (Fujitsu Lab./Tokyo Inst. of Tech.), Youngsuk Kim (Tokyo Inst. of Tech./Disco), Tomoji Nakamura (Fujitsu Lab.), Ryuichi Sugie, Hideki Hashimoto (Toray Research Center), Akira Uedono (Univ. of Tsukuba), Takayuki Ohba (Tokyo Inst. of Tech.) SDM2013-167
Ultra-thin wafer is indispensable for bumpless 3D stacking. To know the thinning damage in detail, an atomic level defec... [more] SDM2013-167
SDM, ICD 2013-08-01
Ishikawa Kanazawa University [Invited Talk] Tera-Scale Three-Dimensional Integration (3DI) using Bumpless TSV Interconnects
Takayuki Ohba (Tokyo Inst. of Tech.) SDM2013-70 ICD2013-52
In combination with 3D logic, memory, and cooling devices, it is possible to construct a roadmap towards high-density in... [more] SDM2013-70 ICD2013-52
SDM, ICD 2013-08-01
Ishikawa Kanazawa University [Panel Discussion] 3D Integration: What and when do we expect?
Kazuya Masu (Tokyo Inst. of Tech.), Hiroaki Ikeda (ASET), Makoto Nagata (Kobe Univ), Kenji Takahashi (Toshiba), Takayuki Ohba (Tokyo Inst. of Tech.), Daisuke Suzuki (Pezy Computing) SDM2013-73 ICD2013-55
 [more] SDM2013-73 ICD2013-55
SDM 2012-03-05
Tokyo Kikai-Shinko-Kaikan Bldg. Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects
Hideki Kitada (Univ. of Tokyo/Fujitsu Lab.), Nobuhide Maeda, Koji Fujimoto, Shoichi Kodama, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima (Univ. of Tokyo/Fujitsu Lab.), Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo) SDM2011-183
 [more] SDM2011-183
SDM 2012-03-05
Tokyo Kikai-Shinko-Kaikan Bldg. Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures
Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184
We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer appli... [more] SDM2011-184
SDM 2011-02-07
Tokyo Kikai-Shinko-Kaikan Bldg. Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology
Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) SDM2010-224
Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vap... [more] SDM2010-224
ICD, SDM 2010-08-27
Hokkaido Sapporo Center for Gender Equality [Invited Talk] Development of sub-10um Thinning Technology using Actual Device Wafers
Nobuhide Maeda, Kim Youngsuk (Univ. of Tokyo), Yukinobu Hikosaka, Takashi Eshita (FSL), Hideki Kitada, Koji Fujimoto (Univ. of Tokyo), Yoriko Mizushima (Fujitsu Labs.), Kousuke Suzuki (DNP), Tomoji Nakamura (Fujitsu Labs.), Akihito Kawai, Kazuhisa Arai (DISCO), Takayuki Ohba (Univ. of Tokyo) SDM2010-141 ICD2010-56
200-mm and 300-mm device wafers were successfully thinned down to less than 10-μm. A 200-nm non-crystalline layer remain... [more] SDM2010-141 ICD2010-56
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