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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-10-25 15:20 |
Miyagi | Tohoku Univ. (Niche) | Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)  SDM2012-89 |
[more] | SDM2012-89 pp.1-4 |
| SDM | 2012-10-25 16:10 |
Miyagi | Tohoku Univ. (Niche) | Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 |
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] | SDM2012-91 pp.11-14 |
| SDM | 2012-06-21 15:05 |
Aichi | VBL, Nagoya Univ. | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] | SDM2012-56 pp.69-74 |
| SDM | 2012-06-21 16:35 |
Aichi | VBL, Nagoya Univ. | Interface controlled silicide Schottky S/D for future 3D devices Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59 |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] | SDM2012-59 pp.87-92 |
| SDM | 2011-10-21 10:15 |
Miyagi | Tohoku Univ. (Niche) | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2011-105 |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] | SDM2011-105 pp.49-52 |
| SDM | 2011-07-04 09:00 |
Aichi | VBL, Nagoya Univ. | High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50 |
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] | SDM2011-50 pp.1-5 |
| SDM | 2011-07-04 10:00 |
Aichi | VBL, Nagoya Univ. | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] | SDM2011-53 pp.17-22 |
| SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas | Legend Hotel, Daejeon, Korea | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] | |
| SDM | 2010-10-22 14:50 |
Miyagi | Tohoku University | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] | SDM2010-167 pp.61-65 |
| SDM | 2010-10-22 16:20 |
Miyagi | Tohoku University | Strain evaluation in Si at atomically flat SiO2/Si interface Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170 |
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] | SDM2010-170 pp.71-75 |
| SDM | 2010-06-22 10:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Nickel silicide Encroachment in Silicon Nanowire and its Suppression Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 |
Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence o... [more] | SDM2010-36 pp.17-22 |
| SDM | 2010-06-22 13:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] | SDM2010-41 pp.43-48 |
| SDM | 2009-10-30 15:45 |
Miyagi | Tohoku University | Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] | SDM2009-134 pp.77-80 |
| SDM, ED | 2009-06-25 12:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81 |
[more] | ED2009-86 SDM2009-81 pp.157-160 |
| SDM | 2008-10-10 16:15 |
Miyagi | Tohoku Univ. | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] | SDM2008-167 pp.69-74 |
| SDM | 2007-06-08 09:00 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39 |
An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] | SDM2007-39 pp.43-48 |
| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
| SDM | 2006-06-22 09:50 |
Hiroshima | Faculty Club, Hiroshima Univ. | The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] | SDM2006-54 pp.71-76 |
| SDM | 2006-06-22 15:05 |
Hiroshima | Faculty Club, Hiroshima Univ. | XPS studies on barrier height at Au/ultra-thin SiO2 interface Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS) |
As a result of ongoing scale-down of Si-MOS devices, gate SiO2 films have been thinned down to 0.8 nm. In this study, th... [more] | SDM2006-63 pp.119-124 |
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