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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2009-06-19 15:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] |
SDM2009-38 pp.67-70 |
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