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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Evaluating Current Collapse of GaN HEMT devices by Carrier Number
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] ED2016-62 CPM2016-95 LQE2016-78
ICD 2007-04-13
Oita   Floating Body RAM Technology and its Scalability to 32nm Node
Hiroomi Nakajima, Naoki Kusunoki, Tomoaki Shino (Toshiba), Tomoki Higashi (TOSMEC), Takashi Ohsawa, Katsuyuki Fujita, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Ryo Fukuda, Yohji Watanabe, Yoshihiro Minami (Toshiba), Atsushi Sakamoto (TJ), Jun Nishimura, Takeshi Hamamoto, Akihiro Nitayama (Toshiba) ICD2007-10
Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb ... [more] ICD2007-10
SDM 2007-03-15
Tokyo Kikai-Shinko-Kaikan Bldg. Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM
Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba)
 [more] SDM2006-259
ICD 2006-04-13
Oita Oita University Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process
Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba)
A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize f... [more] ICD2006-5
ICD 2005-04-14
Fukuoka   A 128Mb DRAM Using a 1T Gain Cell(FBC) on SOI
Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda (Toshiba), Tomoki Higashi (Toshiba Microelectronics), Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe (Toshiba)
We report on a 128Mbit DRAM design using the capacitor-less DRAM cell or the floating body cell(FBC) on SOI. The cell of... [more] ICD2005-5
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