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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2007-10-12
09:50
Fukui Fukui Univ. Low leakage current ITO schottky electrode for AlGaN/GaN HEMT
Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2007-167 CPM2007-93 LQE2007-68
pp.57-61
ED, CPM, LQE 2006-10-05
13:25
Kyoto   Improvement of Breakdown Voltage of AlGaN/GaN HEMT
Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna)
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2006-153 CPM2006-90 LQE2006-57
pp.7-12
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