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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
QIT
(2nd)		 2023-12-17
17:30		 Okinawa OIST
(Primary: On-site, Secondary: Online)		 [Poster Presentation] Analysis of Discrete Modern Hopfield Networks in Open Quantum System
Takeshi Kimura, Kohtaro Kato (Nagoya Univ.) 		Hopfield Networks, a well-known model of associative memory, defines energy function and time evolution.Recently, a new ... [more]
ED, CPM, LQE 2021-11-25
14:35		 Online Online Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34		 The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] ED2021-22 CPM2021-56 LQE2021-34
pp.37-40
NS 2017-10-26
14:55		 Osaka I-site nanba [Poster Presentation] Preliminary investigation of approximation analysis about low-latency network architecture
Takeshi Kimura (Hokkaido Univ.), Krittin Intharawijitr (Tokyo Tech.), Katsuyoshi Iida, Yoshiaki Takai (Hokkaido Univ.) NS2017-104		 In cloud computing, geographic distance between data centres and user devices may not let the delay requirement be satis... [more] NS2017-104
pp.69-71
SDM, ED, CPM 2017-05-26
10:45		 Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20		 An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
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