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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-01-28
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 2RW Dual-port SRAM Design Challenges in Advanced Technology Nodes
Koji Nii, Makoto Yabuuchi (Renesas), Yoshisato Yokoyama (Renesas System Design), Yuichiro Ishii, Takeshi Okagaki, Masao Morimoto, Yasumasa Tsukamoto (Renesas), Koji Tanaka, Miki Tanaka (Renesas System Design), Shinji Tanaka (Renesas) SDM2015-125
 [more] SDM2015-125
SDM, ICD 2015-08-24
Kumamoto Kumamoto City Area and Performance Study of FinFET with Detailed Parasitic Capacitance Analysis in 16nm Process Node
Takeshi Okagaki, Koji Shibutani, Masao Morimoto, Yasumasa Tsukamoto, Koji Nii, Kazunori Onozawa (REL) SDM2015-64 ICD2015-33
 [more] SDM2015-64 ICD2015-33
ICD, SDM 2014-08-05
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process
Takeshi Okagaki, Takumi Hasegawa, Hiroyuki Takashino, Masako Fujii, Atsushi Tsuda, Koji Shibutani, Yoshinori Deguchi, Miho Yokota, Kazunori Onozawa (Renesas) SDM2014-77 ICD2014-46
 [more] SDM2014-77 ICD2014-46
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201
Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]
VLD2007-57 SDM2007-201
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203
We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
SDM, VLD 2006-09-26
Tokyo Kikai-Shinko-Kaikan Bldg. Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas)
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. ... [more] VLD2006-41 SDM2006-162
 Results 1 - 6 of 6  /   
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