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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2016-01-28 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
2RW Dual-port SRAM Design Challenges in Advanced Technology Nodes Koji Nii, Makoto Yabuuchi (Renesas), Yoshisato Yokoyama (Renesas System Design), Yuichiro Ishii, Takeshi Okagaki, Masao Morimoto, Yasumasa Tsukamoto (Renesas), Koji Tanaka, Miki Tanaka (Renesas System Design), Shinji Tanaka (Renesas) SDM2015-125 |
[more] |
SDM2015-125 pp.21-25 |
SDM, ICD |
2015-08-24 15:50 |
Kumamoto |
Kumamoto City |
Area and Performance Study of FinFET with Detailed Parasitic Capacitance Analysis in 16nm Process Node Takeshi Okagaki, Koji Shibutani, Masao Morimoto, Yasumasa Tsukamoto, Koji Nii, Kazunori Onozawa (REL) SDM2015-64 ICD2015-33 |
[more] |
SDM2015-64 ICD2015-33 pp.37-40 |
ICD, SDM |
2014-08-05 13:55 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process Takeshi Okagaki, Takumi Hasegawa, Hiroyuki Takashino, Masako Fujii, Atsushi Tsuda, Koji Shibutani, Yoshinori Deguchi, Miho Yokota, Kazunori Onozawa (Renesas) SDM2014-77 ICD2014-46 |
[more] |
SDM2014-77 ICD2014-46 pp.83-86 |
SDM, VLD |
2007-10-30 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201 |
Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more] |
VLD2007-57 SDM2007-201 pp.33-36 |
SDM, VLD |
2007-10-30 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203 |
We have developed a system consisting of a full-3D process simulator for stress calculation and k·pband calculation... [more] |
VLD2007-59 SDM2007-203 pp.43-46 |
SDM, VLD |
2006-09-26 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas) |
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. ... [more] |
VLD2006-41 SDM2006-162 pp.13-18 |
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