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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2023-01-27
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152
 [more] ED2022-93 MW2022-152
ED, CPM, LQE 2021-11-26
Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48
 [more] ED2021-36 CPM2021-70 LQE2021-48
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. ED2018-78 MW2018-145 (To be available after the conference date) [more] ED2018-78 MW2018-145
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146
 [more] ED2018-79 MW2018-146
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132
 [more] ED2009-153 CPM2009-127 LQE2009-132
MW, ED 2005-01-18
Tokyo   -
Tetsuo Kunii, Masahiro Totsuka, Yoshitaka Kamo, Yoshitsugu Yamamoto, -, -, Toshihiko Shiga, -, -, -, -, Akira Inoue, Tomoki Oku, Takuma Nanjo, Toshiyuki Oishi (Mitsubishi Electric)
 [more] ED2004-216 MW2004-223
 Results 1 - 8 of 8  /   
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