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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech)  ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| ED, CPM, LQE | 2021-11-26 16:50 |
Online | Online | Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48 |
[more] | ED2021-36 CPM2021-70 LQE2021-48 pp.95-98 |
| MW, ED | 2019-01-17 15:25 |
Tokyo | Hitachi, Central Research Lab. | ED2018-78 MW2018-145 |
(To be available after the conference date) [more] | ED2018-78 MW2018-145 pp.55-58 |
| MW, ED | 2019-01-17 15:50 |
Tokyo | Hitachi, Central Research Lab. | Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146 |
[more] | ED2018-79 MW2018-146 pp.59-62 |
| CPM, LQE, ED | 2016-12-12 15:45 |
Kyoto | Kyoto University | Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] | ED2016-63 CPM2016-96 LQE2016-79 pp.31-34 |
| MW, ED | 2015-01-16 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193 |
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] | ED2014-129 MW2014-193 pp.71-76 |
| ED, LQE, CPM | 2009-11-20 13:10 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Aluminum-Free Ohmic contact on Si implanted nitride semiconductors Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132 |
[more] | ED2009-153 CPM2009-127 LQE2009-132 pp.119-123 |
| MW, ED | 2005-01-18 11:10 |
Tokyo | - Tetsuo Kunii, Masahiro Totsuka, Yoshitaka Kamo, Yoshitsugu Yamamoto, -, -, Toshihiko Shiga, -, -, -, -, Akira Inoue, Tomoki Oku, Takuma Nanjo, Toshiyuki Oishi (Mitsubishi Electric) |
[more] | ED2004-216 MW2004-223 pp.25-30 |
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